Investigation of Cu(In,Ga)Se2 thin-film formation during the multi-stage co-evaporation process
Identifieur interne : 000A03 ( Main/Repository ); précédent : 000A02; suivant : 000A04Investigation of Cu(In,Ga)Se2 thin-film formation during the multi-stage co-evaporation process
Auteurs : RBID : Pascal:13-0044774Descripteurs français
- Pascal (Inist)
- Formation film, Circuit multiétage, Méthode section divisée, Codépôt, Rendement élevé, Echelle grande, Entartrage, Procédé dépôt, Mécanisme croissance, Procédé fabrication, Morphologie, Diffraction RX, Microscopie électronique balayage, Spectrométrie Raman, Décharge luminescente, Spectrométrie optique, Spectrométrie émission, Lacune, Défaut antisite, Evaluation performance, Cellule solaire, Séléniure de cuivre, Séléniure de gallium, Séléniure d'indium, Composé quaternaire, Couche mince, Chalcopyrite, Cuivre, Sodium, Cu(In,Ga)Se2.
- Wicri :
English descriptors
- KwdEn :
- Antisite defect, Chalcopyrite, Codeposition, Copper, Copper selenides, Deposition process, Emission spectrometry, Film formation, Gallium selenides, Glow discharge, Growth mechanism, High efficiency, Indium selenides, Large scale, Manufacturing process, Morphology, Multistage circuit, Multistage method, Optical spectrometry, Performance evaluation, Quaternary compound, Raman spectrometry, Scale formation, Scanning electron microscopy, Sodium, Solar cell, Thin film, Vacancy, X ray diffraction.
Abstract
In order to transfer the potential for the high efficiencies seen for Cu(In,Ga)Se2 (CIGSe) thin films from co-evaporation processes to cheaper large-scale deposition techniques, a more intricate understanding of the CIGSe growth process for high-quality material is required. Hence, the growth mechanism for chalcopyrite-type thin films when varying the Cu content during a multi-stage deposition process is studied. Break-off experiments help to understand the intermediate growth stages of the thin-film formation. The film structure and morphology are studied by X-ray diffraction and scanning electron microscopy. The different phases at the film surface are identified by Raman spectroscopy. Depth-resolved compositional analysis is carried out via glow discharge optical emission spectrometry. The experimental results imply an affinity of Na for material phases with a Cu-poor composition, affirming a possible interaction of sodium with Cu vacancies mainly via In(Ga)Cu antisite defects. An efficiency of 12.7% tor vacancy compound-based devices is obtained.
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Caballero</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Helmholtz Zentrum Berlin für Materialien und Energie, Hahn-Meitner Platz 1</s1><s2>14109 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Universidad Autónoma de Madrid, Departamento de Fisica Aplicada, Módulo 12</s1><s2>28049 Madrid</s2><s3>ESP</s3><sZ>1 aut.</sZ></inist:fA14><country>Espagne</country><placeName><region nuts="2" type="communauté">Communauté de Madrid</region></placeName><orgName type="university">Université autonome de Madrid</orgName></affiliation></author><author><name sortKey="Kaufmann, C A" uniqKey="Kaufmann C">C. A. Kaufmann</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Helmholtz Zentrum Berlin für Materialien und Energie, Hahn-Meitner Platz 1</s1><s2>14109 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Efimova, V" uniqKey="Efimova V">V. Efimova</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>IFW Dresden, Institut für Komplexe Materialien, Postfach 270116</s1><s2>01171 Dresden</s2><s3>DEU</s3><sZ>3 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>01171 Dresden</wicri:noRegion><wicri:noRegion>270116</wicri:noRegion><wicri:noRegion>01171 Dresden</wicri:noRegion></affiliation></author><author><name sortKey="Rissom, T" uniqKey="Rissom T">T. Rissom</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Helmholtz Zentrum Berlin für Materialien und Energie, Hahn-Meitner Platz 1</s1><s2>14109 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author><author><name sortKey="Hoffmann, V" uniqKey="Hoffmann V">V. Hoffmann</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>IFW Dresden, Institut für Komplexe Materialien, Postfach 270116</s1><s2>01171 Dresden</s2><s3>DEU</s3><sZ>3 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Allemagne</country><wicri:noRegion>01171 Dresden</wicri:noRegion><wicri:noRegion>270116</wicri:noRegion><wicri:noRegion>01171 Dresden</wicri:noRegion></affiliation></author><author><name sortKey="Schock, H W" uniqKey="Schock H">H. W. Schock</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Helmholtz Zentrum Berlin für Materialien und Energie, Hahn-Meitner Platz 1</s1><s2>14109 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>Allemagne</country><placeName><region type="land" nuts="3">Berlin</region><settlement type="city">Berlin</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0044774</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0044774 INIST</idno><idno type="RBID">Pascal:13-0044774</idno><idno type="wicri:Area/Main/Corpus">001376</idno><idno type="wicri:Area/Main/Repository">000A03</idno></publicationStmt><seriesStmt><idno type="ISSN">1062-7995</idno><title level="j" type="abbreviated">Prog. photovolt.</title><title level="j" type="main">Progress in photovoltaics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Antisite defect</term><term>Chalcopyrite</term><term>Codeposition</term><term>Copper</term><term>Copper selenides</term><term>Deposition process</term><term>Emission spectrometry</term><term>Film formation</term><term>Gallium selenides</term><term>Glow discharge</term><term>Growth mechanism</term><term>High efficiency</term><term>Indium selenides</term><term>Large scale</term><term>Manufacturing process</term><term>Morphology</term><term>Multistage circuit</term><term>Multistage method</term><term>Optical spectrometry</term><term>Performance evaluation</term><term>Quaternary compound</term><term>Raman spectrometry</term><term>Scale formation</term><term>Scanning electron microscopy</term><term>Sodium</term><term>Solar cell</term><term>Thin film</term><term>Vacancy</term><term>X ray diffraction</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Formation film</term><term>Circuit multiétage</term><term>Méthode section divisée</term><term>Codépôt</term><term>Rendement élevé</term><term>Echelle grande</term><term>Entartrage</term><term>Procédé dépôt</term><term>Mécanisme croissance</term><term>Procédé fabrication</term><term>Morphologie</term><term>Diffraction RX</term><term>Microscopie électronique balayage</term><term>Spectrométrie Raman</term><term>Décharge luminescente</term><term>Spectrométrie optique</term><term>Spectrométrie émission</term><term>Lacune</term><term>Défaut antisite</term><term>Evaluation performance</term><term>Cellule solaire</term><term>Séléniure de cuivre</term><term>Séléniure de gallium</term><term>Séléniure d'indium</term><term>Composé quaternaire</term><term>Couche mince</term><term>Chalcopyrite</term><term>Cuivre</term><term>Sodium</term><term>Cu(In,Ga)Se2</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Cuivre</term><term>Sodium</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">In order to transfer the potential for the high efficiencies seen for Cu(In,Ga)Se<sub>2</sub> (CIGSe) thin films from co-evaporation processes to cheaper large-scale deposition techniques, a more intricate understanding of the CIGSe growth process for high-quality material is required. Hence, the growth mechanism for chalcopyrite-type thin films when varying the Cu content during a multi-stage deposition process is studied. Break-off experiments help to understand the intermediate growth stages of the thin-film formation. The film structure and morphology are studied by X-ray diffraction and scanning electron microscopy. The different phases at the film surface are identified by Raman spectroscopy. Depth-resolved compositional analysis is carried out via glow discharge optical emission spectrometry. The experimental results imply an affinity of Na for material phases with a Cu-poor composition, affirming a possible interaction of sodium with Cu vacancies mainly via In(Ga)<sub>Cu</sub> antisite defects. An efficiency of 12.7% tor vacancy compound-based devices is obtained.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1062-7995</s0></fA01><fA03 i2="1"><s0>Prog. photovolt.</s0></fA03><fA05><s2>21</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Investigation of Cu(In,Ga)Se<sub>2</sub> thin-film formation during the multi-stage co-evaporation process</s1></fA08><fA11 i1="01" i2="1"><s1>CABALLERO (R.)</s1></fA11><fA11 i1="02" i2="1"><s1>KAUFMANN (C. A.)</s1></fA11><fA11 i1="03" i2="1"><s1>EFIMOVA (V.)</s1></fA11><fA11 i1="04" i2="1"><s1>RISSOM (T.)</s1></fA11><fA11 i1="05" i2="1"><s1>HOFFMANN (V.)</s1></fA11><fA11 i1="06" i2="1"><s1>SCHOCK (H. W.)</s1></fA11><fA14 i1="01"><s1>Helmholtz Zentrum Berlin für Materialien und Energie, Hahn-Meitner Platz 1</s1><s2>14109 Berlin</s2><s3>DEU</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>6 aut.</sZ></fA14><fA14 i1="02"><s1>Universidad Autónoma de Madrid, Departamento de Fisica Aplicada, Módulo 12</s1><s2>28049 Madrid</s2><s3>ESP</s3><sZ>1 aut.</sZ></fA14><fA14 i1="03"><s1>IFW Dresden, Institut für Komplexe Materialien, Postfach 270116</s1><s2>01171 Dresden</s2><s3>DEU</s3><sZ>3 aut.</sZ><sZ>5 aut.</sZ></fA14><fA20><s1>30-46</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>26755</s2><s5>354000506315980030</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>65 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0044774</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Progress in photovoltaics</s0></fA64><fA66 i1="01"><s0>GBR</s0></fA66><fC01 i1="01" l="ENG"><s0>In order to transfer the potential for the high efficiencies seen for Cu(In,Ga)Se<sub>2</sub> (CIGSe) thin films from co-evaporation processes to cheaper large-scale deposition techniques, a more intricate understanding of the CIGSe growth process for high-quality material is required. Hence, the growth mechanism for chalcopyrite-type thin films when varying the Cu content during a multi-stage deposition process is studied. Break-off experiments help to understand the intermediate growth stages of the thin-film formation. The film structure and morphology are studied by X-ray diffraction and scanning electron microscopy. The different phases at the film surface are identified by Raman spectroscopy. Depth-resolved compositional analysis is carried out via glow discharge optical emission spectrometry. The experimental results imply an affinity of Na for material phases with a Cu-poor composition, affirming a possible interaction of sodium with Cu vacancies mainly via In(Ga)<sub>Cu</sub> antisite defects. An efficiency of 12.7% tor vacancy compound-based devices is obtained.</s0></fC01><fC02 i1="01" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="02" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Formation film</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Film formation</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Formación película</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Circuit multiétage</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Multistage circuit</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Circuito multipiso</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Méthode section divisée</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Multistage method</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Codépôt</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Codeposition</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Codeposición</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Rendement 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gallium</s0><s2>NK</s2><s5>23</s5></fC03><fC03 i1="23" i2="3" l="ENG"><s0>Gallium selenides</s0><s2>NK</s2><s5>23</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>Séléniure d'indium</s0><s2>NK</s2><s5>24</s5></fC03><fC03 i1="24" i2="3" l="ENG"><s0>Indium selenides</s0><s2>NK</s2><s5>24</s5></fC03><fC03 i1="25" i2="X" l="FRE"><s0>Composé quaternaire</s0><s5>25</s5></fC03><fC03 i1="25" i2="X" l="ENG"><s0>Quaternary compound</s0><s5>25</s5></fC03><fC03 i1="25" i2="X" l="SPA"><s0>Compuesto cuaternario</s0><s5>25</s5></fC03><fC03 i1="26" i2="X" l="FRE"><s0>Couche mince</s0><s5>26</s5></fC03><fC03 i1="26" i2="X" l="ENG"><s0>Thin film</s0><s5>26</s5></fC03><fC03 i1="26" i2="X" l="SPA"><s0>Capa fina</s0><s5>26</s5></fC03><fC03 i1="27" i2="X" l="FRE"><s0>Chalcopyrite</s0><s5>27</s5></fC03><fC03 i1="27" i2="X" l="ENG"><s0>Chalcopyrite</s0><s5>27</s5></fC03><fC03 i1="27" i2="X" l="SPA"><s0>Calcopirita</s0><s5>27</s5></fC03><fC03 i1="28" i2="X" l="FRE"><s0>Cuivre</s0><s2>NC</s2><s5>28</s5></fC03><fC03 i1="28" i2="X" l="ENG"><s0>Copper</s0><s2>NC</s2><s5>28</s5></fC03><fC03 i1="28" i2="X" l="SPA"><s0>Cobre</s0><s2>NC</s2><s5>28</s5></fC03><fC03 i1="29" i2="X" l="FRE"><s0>Sodium</s0><s2>NC</s2><s5>29</s5></fC03><fC03 i1="29" i2="X" l="ENG"><s0>Sodium</s0><s2>NC</s2><s5>29</s5></fC03><fC03 i1="29" i2="X" l="SPA"><s0>Sodio</s0><s2>NC</s2><s5>29</s5></fC03><fC03 i1="30" i2="X" l="FRE"><s0>Cu(In,Ga)Se2</s0><s4>INC</s4><s5>82</s5></fC03><fN21><s1>028</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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